SK Hynix Inc. became the industry’s first to develop a 12-layer HBM31 product with a 24 gigabyte 2 memory capacity, currently the largest in the industry. The company succeeded in developing the 24 GB package product that increased the memory capacity by 50% from the previous product, following the mass production of the world’s first HBM3 in June 2022.
Samsung announced the start of mass production of its 8th generation vertical NAND (V-NAND) chips to enable expanded storage space in next generation server systems. These chips feature the industry's highest bit density and storage capacity. They are expected to enable organizations to expand the storage capacity of next generation enterprise servers while extending their use into the automotive market.
Author Credits: Abhishek Verma, Hetal Singh
Report ID: 3724
Published Date: Oct 09, 2023
Report Format: PDF, PPT
Frequently Asked Questions (FAQ)
The rising demand for universal memory devices, along with the growing adoption of AI, IoT, BIG DATA and others are the major factors driving the growth of the next generation memory market.
The market size of next generation memory is anticipated to attain a CAGR of 28% over the forecast period, i.e., 2024-2036.
The major players in the market are Honeywell International Inc., Micron Technology, Inc., Samsung Electronics Co., Ltd, SK Hynix, Inc., Everspin Technologies, Inc., Nanya Technology Corporation, Kingston Technology Corporation, and others.
The non-volatile segment is anticipated to garner the largest market size by the end of 2036 and display significant growth opportunities.
The market in the North America region is projected to hold the largest market share by the end of 2036 and provide more business opportunities in the future.