Companies Dominating the Magneto Resistive RAM (MRAM) Landscape
- Spin Memory Inc.
- Company Overview
- Business Strategy
- Key Product Offerings
- Financial Performance
- Key Performance Indicators
- Risk Analysis
- Recent Development
- Regional Presence
- SWOT Analysis
- Intel Corporation
- Hewlett Packard Enterprise Development LP
- Everspin Technologies Inc.
- Qualcomm Technologies, Inc.
- Avalanche Technology
- Honeywell International Inc.
- NVE Corporation
- Toshiba Corporation
- Crocus Nano Electronics LLC
- Infineon Technologies AG
Browse key industry insights with market data tables & charts from the report:
Frequently Asked Questions (FAQ)
In the year 2025, the industry size of magneto resistive RAM is evaluated at USD 3.25 billion.
Magneto Resistive RAM (MRAM) Market size was over USD 2.13 billion in 2024 and is projected to reach USD 1.1 trillion by 2037, growing at around 61.7% CAGR during the forecast period i.e., between 2025-2037.
North America industry is expected to dominate majority revenue share by 2037, as enterprises are shifting towards data centres in order to reduce the cost of technology infrastructure and to achieve faster computation, lesser power consumption and better scalability.
The major players in the market are Intel Corporation, Hewlett Packard Enterprise Development LP, Everspin Technologies Inc., Qualcomm Technologies, Inc., Avalanche Technology, Honeywell International Inc., NVE Corporation, Toshiba Corporation, Crocus Nano Electronics LLC, Infineon Technologies AG, and others.
