Global Market Size, Forecast, and Trend Highlights Over 2025-2037
Gallium Nitride Market size was valued at USD 1 billion in 2024 and is projected to reach a valuation of USD 29.5 billion by the end of 2037, rising at a CAGR of 29.7% during the forecast period, i.e., 2025-2037. In 2025, the industry size of gallium nitride is estimated at USD 1.2 billion.
The Gallium Nitride (GaN) market is set to experience rapid growth led by applications in electric vehicles, 5G networks, aerospace, and renewable energy. The properties, such as high electron mobility and thermal conductivity of the material, are useful for enhancing the efficiency of energy in small-scale devices. In October 2024, Infineon Technologies AG made a significant advancement in the advancement of GaN technology by creating the first 300mm power wafer platform for mass production. This innovation has been adopted to cut manufacturing costs while increasing chip output capacity, a trend that has been observed across the electronics manufacturing industry to achieve scale and cost objectives in power electronics.
A strong regulatory and investment environment is supporting the growth of the GaN market. The International Energy Agency further reports that energy investment reached USD 3 trillion in 2024, with USD 2 trillion targeted toward clean energy. This is in line with the increased use of GaN semiconductors in energy management and efficiency. Also, in February 2025, DigiKey and Qorvo entered into a global distribution partnership to help drive GaN component availability in IoT, automotive, aerospace, and telecom applications. The development underpins rising commercialization trends in GaN’s international market presence.
Gallium Nitride Sector: Growth Drivers and Challenges
Growth Drivers
- 5G and telecommunications infrastructure: As the number of global 5G connections surpassed 2 billion in December 2024, the need for high-performance RF components has become critical. GaN semiconductors are important for making efficient, compact, high-power power and heat-tolerant RF amplifiers. In June 2024, Mitsubishi Electric launched a new 16W GaN PAM for 5G mMIMO antennas to increase the range of base stations while reducing power consumption. This trend supports GaN in the next-generation wireless infrastructure, and as 5G is implemented across the world, the use of GaN-based RF components will increase. This increased demand is due to the fact that GaN offers high power density, efficiency, and bandwidth compared to other materials, which is ideal for 5G networks.
- Accelerating electric vehicle (EV) adoption: GaN power devices are gradually replacing silicon in electric drivetrains, chargers, and inverters because GaN offers a faster switching speed and better efficiency. In December 2024, ROHM and TSMC formed a partnership to jointly manufacture GaN devices for EVs using TSMC’s GaN-on-Si technology. With the increasing global adoption of EVs, car manufacturers and tier-1 vendors are shifting to GaN to improve battery longevity and efficiency. GaN offers shorter charging times, less power dissipation, and smaller and lighter power converters that are vital for enhancing the power and energy density of electric vehicles. The rise in the use of GaN in the EV industry is expected to be one of the major factors that will fuel the gallium nitride market growth.
- Increasing usage of artificial intelligence & data centers: The growth of AI has led to high energy consumption in hyperscale data centers, which has fueled the demand for GaN-based PSUs. In November 2024, Navitas Semiconductor released the first 8.5 kW PSU based on GaN and SiC to reach 98% efficiency. Thus, as AI workloads continue to grow, GaN’s capability to implement small, high thermal conductivity power solutions makes it a valuable material in HPC applications. GaN-based PSUs provide increased power density and efficiency compared to silicon-based PSUs, therefore bringing about energy saving and lower operating costs. Energy efficiency in data centers, as well as the rising interest in data center AI and machine learning, is fueling the use of GaN in data centers.
Challenges
- Manufacturing scalability and yield constraints: The production of Gallium Nitride (GaN) at a commercial level is still a challenge despite the technological improvements. Growing GaN crystals is challenging and often comes with defects due to problems with substrate compatibility, which reduces the yield. This leads to a supply chain bottleneck, which may slow the further adoption of GaN and raise costs owing to less efficient production.
- Regulatory and radiation hardening for aerospace: One of the key challenges in the GaN market that is likely to slow down the growth of GaN adoption is the strict legislative standards and the requirement for radiation hardening in aerospace and satellite applications. These industries require parts that are capable of working in space conditions such as radiation. The requirement to produce GaN devices that are able to meet these standards while also maintaining performance and reliability increases the cost and difficulty of manufacturing, which slows down the entry and growth of new players in the gallium nitride (GaN) market.
Gallium Nitride Market: Key Insights
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Base Year |
2024 |
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Forecast Year |
2025-2037 |
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CAGR |
29.7% |
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Base Year Market Size (2024) |
USD 1 billion |
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Forecast Year Market Size (2037) |
USD 29.5 billion |
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Regional Scope |
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Gallium Nitride Segmentation
Product Type (Opto-semiconductors, RF Semiconductors, Power Semiconductors)
Opto-semiconductors segment is projected to hold more than 39.9% gallium nitride market share by 2037, due to increasing adoption in optical data transmission, LiDAR, and LEDs. Due to its high efficiency in emitting blue and ultraviolet light, GaN is an important material in high-brightness and energy applications such as optical systems. In December 2024, STMicroelectronics introduced two new GaN bridge devices under the MasterGaN series for optical and lighting applications. This segment’s growth is further accelerated by integration in automotive headlights, displays, and industrial lasers. GaN-based opto-semiconductors also benefit medical applications, including diagnostics and surgical instruments, and help enhance the efficiency and performance of consumer products such as smartphones and television sets.
Device (Discrete Semiconductor, Integrated Semiconductor)
Discrete GaN semiconductors segment is likely to capture gallium nitride market share of over 62.2% by 2037, attributed to their adaptability in EVs, telecom, and power supply units. These discrete GaN FETs and transistors are characterized by high-speed switching capabilities and miniaturization, perfect for modular systems. In June 2024, Transphorm Inc. unveiled a 300W SuperGaN power supply specifically designed for industrial and e-mobility applications. This segment is expected to grow further due to increased design flexibility and ease of thermal management in high voltage systems. In addition, current and future advancements in GaN discrete devices research and development are aimed at improving their performance and lowering the costs, which will make it easier for their use in multiple industries.
Our in-depth analysis of the global gallium nitride market includes the following segments:
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Product Type |
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Device |
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Voltage Range |
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Application |
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Customize this ReportGallium Nitride Industry - Regional Synopsis
Asia Pacific Excluding Japan Market Statistics
APEJ in gallium nitride market is set to capture over 51% revenue share by 2037, led by China, South Korea, India, and Taiwan. A range of applications, such as 5G infrastructure development, electric vehicles, and solar inverters, are driving the GaN demand in this region. In December 2024, ROHM and TSMC agreed to co-develop GaN devices for EVs with GaN-on-Si, bolstering Asia’s manufacturing dominance. Through ambitious energy transition policies and export-oriented semiconductor policies, APEJ is emerging as the growth anchor for GaN.
China gallium nitride market is growing rapidly due to the increasing EV adoption plans and domestic chip self-sufficiency initiatives. In September 2024, the IEA highlighted that China’s renewable electricity generation would increase under its 14th Five-Year Plan, boosting GaN demand in power devices. Domestic manufacturers are sourcing more GaN products and conducting more research and development on GaN materials to decrease import dependency. China’s focus on GaN also benefits military radar, communication satellites, and consumer electronics—making GaN a crucial component for the GaN supply chain politics.
The gallium nitride market in India is on the rise, owing to the government’s “Make in India” semiconductor plan and the increasing use of power electronics in solar, defense, and mobility applications. In August 2024, the India Semiconductor Mission highlighted that there has been a 3X growth in the funding for GaN research in the country’s premier technical institutes. Domestic players are increasingly using GaN in telecom and satellite applications; on the other hand, tie-ups with international players are emerging to set up packaging and testing facilities in the region.
North America Market Analysis
North America gallium nitride market is projected to grow at more than 29.7% CAGR through 2037, driven by defense spending, semiconductor manufacturing, and renewable energy. The high concentration of communication and aerospace industries in the region has provided a favorable environment for GaN use. In October 2024, Texas Instruments inaugurated its second GaN manufacturing facility in Aizu, Japan, in addition to its Dallas-based plant, thereby enhancing the supply resilience of North America through two-way semiconductor trade. This expansion caters to the demand in the U.S. for renewable energy systems and advanced power electronics.
The U.S. gallium nitride (GaN) market is heavily dependent on federal funding and private-public sector research partnerships. In December 2024, GlobalFoundries secured government funding of USD 9.5 million for the enhancement of the GaN-on-silicon chip manufacturing at its Vermont facility. The move will also expand domestic GaN capabilities for aerospace, 5G, and RF systems applications. Alongside the CHIPS Act and DoD-funded initiatives, this funding is a sign of a concerted effort to build more domestic semiconductor supply chains and decrease reliance on foreign sources of key materials.
Canada is expanding its semiconductor value chain, targeting clean energy and RF component applications where GaN is most pertinent. Cambridge GaN Devices received USD 32 million in Series C in February 2025, with plans to operate in Canada, the UK, and Asia. The investment will help to increase the production of GaN-enabled devices in the automotive and industrial sectors. As Canada increasingly syncs up with the U.S. on chip security and green tech objectives, its part in North American GaN growth increases as well.
Companies Dominating the Gallium Nitride Landscape
- Efficient Power Conversion Corporation
- Company Overview
- Business Strategy
- Key Product Offerings
- Financial Performance
- Key Performance Indicators
- Risk Analysis
- Recent Development
- Regional Presence
- SWOT Analysis
- Infineon Technologies AG
- MACOM Technology Solutions Holdings, Inc.
- Mitsubishi Electric Corporation
- NexGen Power Systems
- Nichia Corporation
- NXP Semiconductors N.V.
- Qorvo, Inc.
- Renesas Electronics Corporation
- ROHM Co., Ltd.
- STMicroelectronics N.V.
- Sumitomo Electric Industries, Ltd.
- Texas Instruments Incorporated
The global gallium nitride market is highly competitive and features strategic collaborations in the research and development of GaN devices and solutions. Some of the key players in the market include Infineon Technologies AG, MACOM, Efficient Power Conversion Corporation (EPC), ROHM, Texas Instruments, Mitsubishi Electric, STMicroelectronics, NexGen Power Systems, Qorvo, Renesas Electronics, NXP Semiconductors, and Sumitomo Electric Industries. These firms are growing their GaN portfolios through vertical integration, new wafer technologies, and geographic diversification to capture demand in power, RF, and optoelectronic applications.
One of the noticeable developments in the gallium nitride (GaN) market was in September 2024, when Infineon Technologies launched the production of the first 300mm GaN wafer, which provides 2.3 times higher chip yield compared to the 200mm wafers. This breakthrough makes it possible to produce GaN semiconductors for high-volume manufacturing, reducing costs and increasing efficiency. It further underlines companies focus on GaN’s expansion across automotive, cloud, and renewable energy applications.
Here are some leading companies in the gallium nitride market:
In the News
- In March 2025, Frontgrade Technologies successfully screened its gallium nitride (GaN) DC-DC converter and electromagnetic interference (EMI) filter to meet MIL-PRF-38534 Class L requirements. These isolated, single-stage converters leverage advanced GaN FET technology to provide spacecraft designers with efficient power conversion solutions, offering 93% efficiency. The devices are designed to respond rapidly to dynamic power demands and provide multiple voltage outputs for maximum flexibility.
- In February 2025, Texas Instruments introduced the industry's first space-grade 200V gallium nitride (GaN) field-effect transistor (FET) gate driver. Designed to improve power system efficiency for satellites, the new gate driver accurately drives GaN FETs with fast rise and fall times, enabling smaller and more efficient satellite power supplies.
- In February 2025, Qorvo, Inc. and DigiKey, a major global commerce distributor with the greatest assortment of technical components and automation items in stock for quick dispatch, announced a global distribution agreement. This partnership will increase Qorvo's high-performance solutions' visibility, accessibility, and delivery speed to clients worldwide.
Author Credits: Rajrani Baghel
- Report ID: 7542
- Published Date: Apr 23, 2025
- Report Format: PDF, PPT
